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Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering

机译:调整石墨烯中有效的精细结构常数:相反   电介质屏蔽对短程和长程电位散射的影响

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摘要

We reduce the dimensionless interaction strength in graphene by adding awater overlayer in ultra-high vacuum, thereby increasing dielectric screening.The mobility limited by long-range impurity scattering is increased over 30percent, due to the background dielectric constant enhancement leading toreduced interaction of electrons with charged impurities. However, thecarrier-density-independent conductivity due to short range impurities isdecreased by almost 40 percent, due to reduced screening of the impuritypotential by conduction electrons. The minimum conductivity is nearlyunchanged, due to canceling contributions from the electron/hole puddle densityand long-range impurity mobility. Experimental data are compared withtheoretical predictions with excellent agreement.
机译:我们通过在超高真空中添加水覆盖层来降低石墨烯中的无量纲相互作用强度,从而增加了介电屏蔽性。由于背景介电常数的增强导致电子与电子的相互作用降低,因此,由于长期杂质散射而导致的迁移率提高了30%以上。带电杂质。但是,由于短程杂质导致的与载流子密度无关的电导率降低了近40%,这是由于传导电子对杂质电位的屏蔽作用降低了。由于抵消了电子/空穴熔池密度和远距离杂质迁移率的影响,最小电导率几乎没有变化。实验数据与理论预测值进行了比较,吻合得很好。

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